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Patents:

• B. T. Collins, M. Donofrio, K. W. Haberern, B. Langsdorf, A. Mathew, H. A. Seibel, I. Todorov, B. E. Williams. "Phosphor Converted Light Emitting Device " U.S. Patent 14/120,297 (2015).
• P. Lefevre, A. Mathew, S. X. Qiao, G. Wu, D. A. Wells, and O. K. Hsu. "Chemical-Mechanical Planarization Pad Including Patterned Structural Domains" U.S. Patent 8,435,099 (2013).
• P. Lefevre, A. Mathew, G. Wu, S. X. Qiao, O. K. Hsu, D. A. Wells, J. E. Aldeborgh, and M. C. Jin. "Multi-Layered Chemical-Mechanical Planarization Pad" U.S. Patent 8,790,165 (2014).
• O. K. Hsu, P. Lefevre, D. A.Wells, J. E. Aldeborgh, M. C. Jin, S. X. Qiao, A. Mathew, and G.Wu. "Polishing Pad With Controlled Void Formation" U.S. Patent 8,377,351 (2013).
• O. K. Hsu, P. Lefevre, D. A. Wells, S. X. Qiao, A. Mathew, and G.Wu. "Chemical Mechanical Planarization Pad With Void Network" U.S. Patent 8,684,794 (2014).
• P. Lefevre, O. K. Hsu, D. A. Wells, J. E. Aldeborgh, M. C. Jin, G. Wu, and A. Mathew. "Method of Grooving a Chemical-Mechanical Planarization Pad" U.S. Patent 8,758,659 (2014).

Publications & Conference Proceedings:

• A. Mathew, K. Demirkan, R. L. Opila, C.-G. Wang, G. Wilk, D. G. Watson X-ray Photoelectron Spectroscopy of High-k Dielectrics AIP Proc., 788, 85 (2005)
• A. Mathew, L. S. Wielunski, R.L. Opila, and B. G. Willis. Bonding States and Coverage Calculations for HfO₂ Deposited on H₂O Terminated Si(100)-2x1 Using Atomic Layer Deposition ECS Trans. - Physics and Technology of High-k Gate Dielectrics V, 11,183-189 (2007)
• A. Mathew, K. Demirkan, R.L. Opila, C.-G. Wang, J. W. Maes, G. Wilk Investigation of Nitrided Hafnium Silicates for High-k Dielectrics using Photoelectron Spectroscopy. Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment PV vol. 2005-05, 360 - 365 (2005).
• B. G. Willis and A. Mathew. Growth of ordered SrO layers on Si(100) using metal-organic surface reactions. Journal of Vacuum Science & Technology A 26 (1) 83-89 (2008).
• B. G. Willis, A. Mathew, L.S. Wielunski, and R.L. Opila Adsorption and reaction of HfCl₄ with H₂O terminated Si(100)-2x1. J. Phys. Chem. C, 112 (6), 1994 -2003 (2008).
• K. Demirkan, A. Mathew, C. Weiland, M. Reid, and R. L. Opila. Reactivity and Morphology of Vapor Deposited Al/Polymer Interfaces for Organic Semiconductor Devices. Journal of Applied Physics 103, 034505 (2008).
• L. P. Shepherd, A. Mathew, B. E. McCandless, B. G. Willis Oxygen pressure dependence of copper ion transport in SiO₂ dielectrics. JVST B 24 (3) 1297 (2006)
• K. Beadle, R. Gupta, A. Mathew, J.G. Chen, and B. G. Willis. CVD Synthesis of Phase-Rich WC Thin Films on Silicon and Carbon Substrates. Thin Solid Films 516 (12) 3847 (2007).
• K. Demirkan, R. L. Opila, A. Mathew Photoelectron spectroscopy investigation of high-k dielectrics. Physics and Technology of High-k Gate Dielectrics II (2003-22), ed. S. Kar et. al., 299-306 (2003).
• K. Demirkan, A. Mathew, R. L. Opila "Photoelectron Spectroscopy Investigation of Interface Formation Between poly(2-methoxy-5(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) and Aluminum" (MRS 2005)
• K. Demirkan, A. Mathew, A. M. Rawlett, and R. L. Opila. Energy level alignment at organic semiconductor/metal interfaces: Effect of polar self-assembled monolayers at the interface Journal of Chemical Physics, 128 (7), 074705 (2008).
• W.G. Wang, K.J. Yee, D.H. Kim, K.J. Han, X.R. Wang, C. Ni, T. Moriyama, A. Mathew, R. L. Opila, T. Zhu and J. Q. Xiao Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering Phys. Rev. B. 77, 155207 (2008)
• A. Mathew, K. Demirkan, C.-G. Wang, G.D.Wilk, R.L.Opila Photoemission Studies of Nitrided Hafnium Silicates for High-k Dielectrics (APS 2006)
• A. Mathew, K. Demirkan, C.-G. Wang, G.D.Wilk, R.L.Opila Characterization of Nitrided Hafnium Silicates for High-k Dielectrics using Photoelectron Spectroscopy. (AVS 2005)
• A. Mathew, K. Demirkan, R.L. Opila, C.-G. Wang, J. W. Maes, G. Wilk Investigation of Nitrided Hafnium Silicates for High-κ Dielectrics using Photoelectron Spectroscopy. (ECS 2005)
• A. Mathew, K. Demirkan, C.-G. Wang, G.D.Wilk, D.G. Watson, R.L.Opila X-ray Photoelectron Spectrscopy of High-k dielectrics, 2005 International Conference in Characterization and Metrology for ULSI Technology. (Invited Talk)
• K. Demirkan, A. Mathew, S. Vaidyanathan, M. Galvin, R. L. Opila Photoelectron Spectroscopy of Organic Polymer/Metal Interfaces for OLEDs. (MRS Spring 2005)
• C.-G. Wang, H. Velasco, M. Verghese, E. Shero, G. Wilk, J. W, Maes, O. Laitinen, W. Deweerd, A. Delabie, R. L. Opila, A. Mathew, and K. Demirkan, J. Morais and I.J.R. Baumvol Nitrided hafnium silicates for gate dielectrics. AVS 2004
• C.-G. Wang, M. Verghese, E. Shero, G. Wilk, J. W, Maes, H. De Witte, W. Deweerd, A. Delabie, A. Mathew, K. Demirkan, R. L. Opila, "Highly scaleable, high-quality ALCVD hafnium silicates gate dielectrics with inorganic Hf precursor" AVS 5th International Conference on Atomic Layer Deposition 2005, August 8-10, 2005, San Jose, CA, USA